Thin film transistor and manufacturing method thereof, array substrate and display device

摘要

A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

主权项

1. A thin film transistor comprising:
a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate located between the source and the drain formed over the etch-stop layer, the source, the drain and the gate are in a same layer, wherein the thin film transistor further comprises a protection layer formed over the source, the drain and the gate, and a pixel electrode formed over the protection layer, and wherein the pixel electrode is electronically connected with the drain under the protection layer by a via hole on the protection layer.