| 主权项 |
1. A device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states, the device comprising:
a sensing circuit configured to sense a sensing voltage of the resistive memory cell and to output a resultant value in response to the sensing voltage which is indicative for the actual cell state, a settling circuit, including a plurality of current mirrors, configured to settle the sensing voltage to a certain target voltage representing one of the M programmable cell states, a prebiasing circuit configured to pre-bias a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage, and a resistance circuit including a plurality of resistors connected in series and coupled in parallel to the resistive memory cell, wherein the resistance circuit is configured to reduce an effective resistance seen by the prebiasing circuit, wherein the settling circuit and the resistance circuit are configured to form a plurality of current-resistor pairs being switchable to define a linear range of detection currents corresponding to the certain target voltages, each of the plurality of current-resistor pairs including one current mirror and one resistor. |
