发明名称 Methods of Operating Non-Volatile Memory Devices
摘要 A method of operating a non-volatile memory device includes receiving program data and a program address. Memory cells that correspond to the program address are selected from among memory cells in an erased state. The selected memory cells are programmed based on the program data such that each of the selected memory cells is programmed to one of a plurality of programmed states, where threshold voltage distributions of the programmed states are different from each other and are higher than a threshold voltage distribution associated with the erased state. By programming all or a portion of the memory cells corresponding to the erased state to have positive threshold voltages, degradation of the data retention capability of the memory cells may be reduced.
申请公布号 US2016372185(A1) 申请公布日期 2016.12.22
申请号 US201615055186 申请日期 2016.02.26
申请人 Samsung Electronics Co., Ltd. 发明人 Shim Young-Seop;Kim Jae-Hong;Han Jin-Man
分类号 G11C11/56;G11C16/34 主分类号 G11C11/56
代理机构 代理人
主权项 1. A method of operating a non-volatile memory device, the method comprising: receiving program data and a program address; selecting selection memory cells from among memory cells in an erased state, wherein the selection memory cells correspond to the program address; and programming all of the selection memory cells based on the program data such that each of the selection memory cells is programmed to one of a plurality of programmed states, wherein threshold voltage distributions of the plurality of programmed states are different from each other and wherein threshold voltage distributions of the plurality of programmed states are higher than a threshold voltage distribution of the erased state.
地址 Suwon-si KR