| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an excellent positive resist composition exhibiting a sufficiently preferable contrast by exposure to EUV light, causing no problem of outgas during exposure, and having a decreased development defect, and to provide a pattern forming method using the composition. <P>SOLUTION: The positive resist composition contains a resin having a repeating unit of a specified structure and having the solubility with an alkali developing solution increased by an action of an acid, and a sulfonium salt compound of a specified structure generating an acid by an action of EUV light. The pattern forming method is carried out by using the above composition. <P>COPYRIGHT: (C)2007,JPO&INPIT |
