| 摘要 |
PURPOSE:To improve a resist profile and to expand a focus margin by subjecting the chemical amplification type resist thinly applied on a substrate to full-surface exposing, then applying the chemical amplification type resist thereon and selectively exposing the resist. CONSTITUTION:The 1st chemical amplification type resist layer 11 of a negative type is thinly applied on a semiconductor substrate 10 and is subjected to the full-surface exposing. The 2nd chemical amplification type resist layer 12 of the same kind is applied on the 1st chemical amplification type resist layer 11 and is subjected to selective exposing by using a mask. An acid concn. distribution 12A arises according to a light intensity distribution in this case. The acid generated in the 1st chemical amplification type resist layer 11 rises to increase the acid concn. in the lower part of the 2nd chemical amplification type resist layer 12 if the layer is subjected to baking after the exposing. The uniformized rectangular acid concn. distribution 12A is thereby obtd. The resists are insolubilized by this acid. The negative patterns having rectangularity are obtd. if the resists are subjected to development processing by an aq. alkaline soln. |
