发明名称 Metal wiring method for an undercut
摘要 <p>A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut. <IMAGE></p>
申请公布号 EP1411025(B1) 申请公布日期 2007.09.19
申请号 EP20030256418 申请日期 2003.10.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHONG, CI-MOO;CHUNG, SEOK-WHAN;KANG, SEOK-JIN;LEE, MOON-CHUL;JUNG, KYU-DONG;KIM, JONG-SEOK;JUN, CHAN-BONG;HONG, SEOG-WOO;KANG, JUNG-HO
分类号 B81C1/00;B81B1/00;B81B7/00;H01L21/28;H01L21/768;H01L23/522 主分类号 B81C1/00
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