| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition which forms a pattern excellent in shape and line edge roughness. <P>SOLUTION: The chemically amplified photoresist composition includes an acid generator represented by formula (I), and a resin having a structural unit represented by formula (II), wherein Q<SP>1</SP>and Q<SP>2</SP>represent F or 1-6C perfluoroalkyl; X<SP>0</SP>represents a divalent 1-17C saturated hydrocarbon group; Y<SP>1</SP>represents a 3-36C saturated cyclic hydrocarbon group; R<SP>1</SP>represents halogen atom or methyl; X<SP>2</SP>represents a single bond or -[CH<SB>2</SB>]<SB>k</SB>-, k represents an integer of 1-8; and Y<SP>2</SP>represents a 4-36C saturated cyclic hydrocarbon group. <P>COPYRIGHT: (C)2010,JPO&INPIT |
