| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor device in which a CuSncompound is formed on a surface of a joined member without improving heat resistance of a semiconductor element.SOLUTION: A semiconductor device comprises a semiconductor element, a bonded member 2 joined to the semiconductor element and a joining layer 4 which joins the joined member. The joined member includes a nickel layer 2a. The joining layer 4 joins an electrode of the semiconductor element and the nickel layer 2a. The joining layer 4 includes a solder part 4a and a CuSnpart 4b. The solder part 4a contains at least tin as a constituent element of a base material and has elemental copper 20 inside the base material. The CuSnpart 4b contacts the nickel layer 2a. A percentage of a copper element contained in the joining layer 4 is greater than or equal to 2.0 wt%.SELECTED DRAWING: Figure 2 |
