发明名称 Cobalt base film-forming method, cobalt base film-forming material, and novel compound
摘要 A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.
申请公布号 US9428835(B2) 申请公布日期 2016.08.30
申请号 US201214349037 申请日期 2012.10.04
申请人 GAS-PHASE GROWTH LTD.;Tokyo Electron Limited 发明人 Machida Hideaki;Ishikawa Masato;Sudoh Hiroshi;Kawano Yumiko;Iwai Kazutoshi
分类号 C23C16/18;C23C18/08;C07F15/06;C23C18/04 主分类号 C23C16/18
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P
主权项 1. A method for forming a cobalt base film, the method comprising: transporting bis(N,N′-diisopropyl-propionamidinate)cobalt to a film formation chamber; and forming a cobalt base film on a substrate by decomposition of the bis(N,N′-diisopropyl-propionamidinate)cobalt transported to the film formation chamber; wherein: the film formation process comprises at least a first film formation process and a second film formation process; the second film formation process occurs after the first film formation process; an internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process; in the first film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, andthe film formation chamber is not supplied with H2; in the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2; and (the H2)/(the NH3 and/or NH3 product compound) is 0.0001 to 2 (molar ratio).
地址 Koganei-shi JP