| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor power module which achieves high heat radiation performance and enables simplification of work related to heat treatment.SOLUTION: A semiconductor power module 1 includes: an insulation substrate 10 in which a first conducting layer 11 is provided on one surface 10a and a second conducting layer 12 is provided on the other surface 10b; a semiconductor element 20 disposed on the one surface 10a side; and a heat sink 30 disposed on the other surface 10b side. The heat sink 30 has folding fins 31 formed by folding a metal plate. The semiconductor element 20 and the first conducting layer 11, and the sink 30 and the second conducting layer 12 are joined through solder 40 having the same melting point.SELECTED DRAWING: Figure 1 |
