发明名称 PLASMA SOURCE MECHANISM AND FILM FORMING APPARATUS
摘要 Provided is a plasma processing technology which makes it possible to generate plasma of a large area with excellent repeatability, is applicable to various purposes and uses a low-cost plasma source. Specifically, a plasma source mechanism (1) is applicable to a vacuum apparatus (21) having a vacuum chamber (20), and the plasma source mechanism is provided with an antenna section (12), which is disposed outside a vacuum tank (20) through a dielectric section (10) and permits high frequency power to be applied; and a magnet section (11) which is disposed in the vicinity of the antenna section (12) outside the vacuum chamber (20) through the dielectric section (10) and has a rectangular shape that corresponds to the antenna section (12). In the antenna section (12), first and second antenna coils (14, 15) are adjacently disposed, and the first and the second antenna coils (14, 15) are connected in parallel to each other.
申请公布号 KR20100076067(A) 申请公布日期 2010.07.05
申请号 KR20107012794 申请日期 2008.12.12
申请人 ULVAC, INC. 发明人 MATSUMOTO TAKAFUMI;SUZUKI TOSHIHIRO;NAKAMUTA YUU;MATSUMOTO MASAHIRO;KUBO MASASHI
分类号 H05H1/46;C23C14/58 主分类号 H05H1/46
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