发明名称 |
LOW MODULUS SPACERS FOR CHANNEL STRESS ENHANCEMENT |
摘要 |
A semiconductor structure and its method of fabrication employ a semiconductor substrate having a channel region. A gate electrode is located over the semiconductor substrate. A spacer is located adjacent a sidewall of the gate electrode. The spacer is formed of a material having a modulus of from about 10 to about 50 GPa. The modulus provides enhanced stress within the channel region.
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申请公布号 |
US2007096170(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050163871 |
申请日期 |
2005.11.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;UTOMO HENRY K. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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