发明名称 High speed method for plating palladium and palladium alloys
摘要 A high speed method of depositing palladium and palladium alloys is disclosed. The high speed method uses an aqueous, ammonia-based bath which has reduced free ammonia in the bath. The high speed method may be used to deposit palladium and palladium alloy coatings on various substrates such as electrical devices and jewelry.
申请公布号 US9435046(B2) 申请公布日期 2016.09.06
申请号 US201313924553 申请日期 2013.06.22
申请人 Rohm and Haas Electronic Materials LLC 发明人 Zhang-Beglinger Wan;Clauss Margit;Guebey Jonas;Schwager Felix J.
分类号 C25D3/56;C25D3/52 主分类号 C25D3/56
代理机构 代理人 Piskorski John J.
主权项 1. A method comprising: a) providing a composition consisting of one or more sources of palladium ions, one or more sources of alloying metal ions, wherein the alloying metal ions are selected from the group consisting of nickel ions, cobalt ions, silver ions, zinc ions and iron ions, optionally one or more of alkali metal hydroxides and metal carbonates, optionally one or more buffers selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, acetic acid, boric acid, carbonic acid, citric acid, tetraboric acid, maleic acid, itaconic acid and salts thereof, optionally one or more surfactants, one or more brighteners selected from the group consisting of succinimide, maleimide, quinolones, substituted quinolones, phenanthrolines and substituted phenanthrolines and quaternized derivitives thereof, pyridine carboxylic acids and pyridine carboxylic acid amines, ammonium ions, free ammonia in amounts of 10 g/L to 45 g/L and 80 g/L to 200 g/L of urea, water, and a pH of the composition is from 7 to 8; b) contacting a substrate with the composition; and c) generating a current density of at least 10 Amps/dm2 to deposit palladium alloy on the substrate.
地址 Marlborough MA US
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