| 发明名称 |
FINFETS HAVING STEP SIDED CONTACT PLUGS AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape. |
| 申请公布号 |
US2016260669(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201614989646 |
申请日期 |
2016.01.06 |
| 申请人 |
PAAK Sun Hom;KIM Sung Min |
发明人 |
PAAK Sun Hom;KIM Sung Min |
| 分类号 |
H01L23/535;H01L29/08;H01L29/161;H01L23/528;H01L29/165;H01L29/78;H01L27/092;H01L29/06;H01L29/16 |
主分类号 |
H01L23/535 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an active fin extending in a first direction on a substrate; a gate electrode intersecting the active fin and extending in a second direction that is different from the first direction; a source/drain region on the active fin on both sides of the gate electrode; and a contact plug on the source/drain region on one side of the gate electrode and extending in the second direction, the contact plug having a side extending in the second direction which has a step portion having a step shape. |
| 地址 |
Seoul KR |
