Semiconductor device and method for fabricating the same

摘要

A semiconductor device includes a fully silicided first gate interconnect formed on a semiconductor substrate, a first sidewall formed on a side of the first gate interconnect, and impurity diffusion layers formed in an active region of the semiconductor substrate. A shared contact plug is formed in an interlayer dielectric formed on the semiconductor substrate so as to be connected to the first gate interconnect and associated one of the impurity diffusion layers. The first gate interconnect is formed, at its part connected to the shared contact plug, with a projection part projecting beyond the first sidewall.