| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of reducing the number of processes without damaging functions and obtaining the semiconductor device, having at least two kinds of photodetectors at low cost. <P>SOLUTION: For instance, when forming an impurity diffused layer for an extraction electrode to be formed at a photodiode PD-1 as a photodetector (P+-type impurity diffused layer 35 for the extraction electrode to be formed at a P-type well 32) and an impurity diffused layer for an extraction electrode to be formed at a photodiode PD-2 as a photodetector (P+-type impurity diffused layer 45 for the extraction electrode to be formed at a p-type well 42), an isolation layer (P+-type impurity diffused layer 51) for electrically isolating the photodiode PD-1 and the photodiode PD-2 is formed, at the same time. Thus, respective originally required processes for forming one of the extraction electrode and the isolation layer (resist formation, its opening pattern formation and ion implantation, etc., for instance) can be omitted. <P>COPYRIGHT: (C)2010,JPO&INPIT |
