MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE

摘要

A method for manufacturing a semiconductor substrate is provided to restrain the permeation of an etchant by using a metal membrane having a great adhesion with a substrate as an etch mask. A substrate is provided(P10). A photoresist layer is formed on at least one surface of the substrate(P20). A target pattern is recognized on the photoresist layer and the photoresist layer is developed(P30). A metal membrane is formed on the substrate of which a part is covered with the photoresist layer(P40). The metal thin layer is removed to pattern the metal membrane(P50). The exposed substrate is selectively etched by using the metal membrane as an etch mask(P60). A metal protection layer(P70) is formed on an etched surface of the substrate exposed by the etching(P70). The metal membrane includes a nickel(Ni) based first metal layer, a palladium(Pd) based second metal layer, and a gold(Au) based third metal which are sequentially laminated on the substrate.