| 发明名称 | Copper-containing layer on under-bump metallization layer | ||
| 摘要 | A semiconductor device includes an under-bump metallization (UBM) layer over a substrate. The semiconductor device also includes a copper-containing layer having a base portion over the UBM layer. The semiconductor device further includes a solder bump over the UBM layer and over the copper-containing layer. The base portion is embedded in the solder bump. The copper-containing layer has a cylindrical shape and includes at least two segments separated by at least two openings. A first total area (A) of the at least two openings is greater than about 3% of a second total area (B) of the at least two segments. The first total area (A) is less than about 70% of the second total area (B) of the at least two segments. | ||
| 申请公布号 | US9472524(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201514863942 | 申请日期 | 2015.09.24 |
| 申请人 | Taiwan Semiconductor Manufacturing Co., Ltd. | 发明人 | Chen Yu-Feng;Lin Chun-Hung;Pu Han-Ping;Tung Chih-Hang;Wu Kai-Chiang;Ho Ming-Che |
| 分类号 | H01L23/488;H01L23/00 | 主分类号 | H01L23/488 |
| 代理机构 | Eschweiler & Associates, LLC | 代理人 | Eschweiler & Associates, LLC |
| 主权项 | 1. A semiconductor device, comprising: an under-bump metallization (UBM) layer over a substrate; a copper-containing layer having a base portion over the UBM layer; and a solder bump over the UBM layer and over the copper-containing layer, the base portion being embedded in the solder bump; wherein the copper-containing layer has a cylindrical shape and comprises at least two segments separated by at least two openings,a first total area (A) of the at least two openings is greater than about 3% of a second total area (B) of the at least two segments, andthe first total area (A) is less than about 70% of the second total area (B) of the at least two segments. | ||
| 地址 | Hsin-Chu TW | ||