发明名称 SEMICONDUCTOR STACK OF POWER CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce current unbalance between semiconductor devices in the semiconductor stack of a power conversion device. SOLUTION: A wiring board 3 is constituted as a three-layered structure consisting of an alternating-current terminal layer U, a positive-pole terminal layer P, and a negative-pole terminal layer N. These layers are arranged in proximity to one another and in parallel with one another, in such a manner that the direction of currents flowing from the positive-pole terminal layer P to the alternating-current terminal layer U is opposite to the direction of the currents flowing from the alternating-current terminal layer U to the negative-pole terminal layer N. Thereby the field interferences of the semiconductor devices with each other is eliminated, and a current unbalance is reduced. Number 2 in the figure refers to a base on which the semiconductor devices 1 are to be mounted.
申请公布号 JPH10327573(A) 申请公布日期 1998.12.08
申请号 JP19970132667 申请日期 1997.05.23
申请人 FUJI ELECTRIC CO LTD 发明人 KIN SEIITSU;YAMAMOTO HIROSHI
分类号 H01L23/427;H01L25/07;H01L25/18;H02M1/00;(IPC1-7):H02M1/00 主分类号 H01L23/427
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