发明名称 |
Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
摘要 |
A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.
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申请公布号 |
EP1845132(A2) |
申请公布日期 |
2007.10.17 |
申请号 |
EP20070251304 |
申请日期 |
2007.03.27 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA, TSUTOMU;UEDA, TAKAFUMI;IWABUCHI, MOTOAKI |
分类号 |
C08L83/04;B32B9/04;C09D183/04;G03F7/09 |
主分类号 |
C08L83/04 |
代理机构 |
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主权项 |
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