| 摘要 |
The present invention relates to an etching composition comprising potassium hydroxide; at least one alkaline compound selected from the group consisting of TEAH, TMAF and NH4OH; and water, or to an etching composition comprising: at least one inorganic alkaline hydroxide selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, and lithium hydroxide; at least one alkaline compound; water; and at least one corrosion inhibitor, wherein the etching composition preferentially etches silicon present on a substrate prior to silicon dioxide present on the substrate. Also, the present invention relates to a method for using such etching compositions. |
