Interposer structure and manufacturing method thereof

摘要

The present disclosure relates to an interposer structure and a manufacturing method thereof. The interposer structure includes a first dielectric layer, a conductive pad, and a bump. The conductive pad is disposed in the first dielectric layer, wherein a top surface of the conductive pad is exposed from a first surface of the first dielectric layer, the conductive pad further includes a plurality of connection feet, and the connection feet protrude from a bottom surface of the conductive pad to a second surface of the first dielectric layer. The bump is disposed on the second surface of the first dielectric layer, and the bump directly contacts to the connection feet. Through the aforementioned interposer structure, it is sufficient to achieve the purpose of improving the electrical performance of the semiconductor device and avoiding the signal being loss through the TSV.

主权项

1. An interposer structure, comprising:
a first dielectric layer, comprising a first surface and a second surface opposite to the first surface, wherein the first dielectric layer comprises a multilayer structure comprising a third dielectric layer and a fourth dielectric layer on the third dielectric layer; a conductive pad disposed in the first dielectric layer, wherein a portion of the conductive pad is disposed in the fourth dielectric layer, a top surface of the portion of the conductive pad is exposed from the first surface of the first dielectric layer, the conductive pad further comprises a plurality of connection feet, and the connection feet protrude from a bottom surface of the portion of the conductive pad to the second surface of the first dielectric layer, wherein the conductive pad and the connection feet are monolithic and the connection feet protrude from the fourth dielectric layer and penetrates through the third dielectric layer; a bump, disposed on the second surface of the first dielectric layer, the bump directly contacting to the connection feet.