SEMICONDUCTOR DEVICE WITH OPTICAL AND ELECTRICAL VIAS

摘要

The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.

主权项

1. A method of producing a semiconductor device with optical via and electrical via, comprising:
providing a semiconductor substrate having a main surface and an opposite further main surface with a contact pad arranged above the further main surface; forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via from the main surface to the further main surface above the contact pad; arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad; and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.