| 摘要 |
PROBLEM TO BE SOLVED: To provide ESD protection circuits which are provided in specified places, and avoid effectively generated ESDs, and further, can prevent effectively equipment from suffering damages. SOLUTION: With respect to the ESD protection circuits, there are provided a plurality of thin-film transistors, each of which has a gate and a source/drain, and one or more point-structures which are formed in specified places integrally with the one or more gates of the thin-film transistors and comprise the rear portions of the one or more gates or one-portions of the edges of the one or more gates. COPYRIGHT: (C)2005,JPO&NCIPI
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