NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A non-volatile semiconductor memory device and a method of manufacturing the same are provided to prevent a short circuit between a first contact structure and a bit line and suppress generation of a bridge between the first contact structures adjacent to each other by forming the first structure including a first and second conductive layer patterns and a first spacer. A substrate(100) includes a cell region and a peripheral region. A plurality of gate structures(125,130,135,140) are formed on the substrate. An insulating layer(145) is formed on the substrate in order to cover the gate structures. A first contact structure(180) comes in contact with the cell region of the substrate through the insulating layer and includes a first conductive layer pattern(161), a second conductive layer pattern(164), and a first spacer(162). A second contact structure(181) comes in contact with the peripheral region of the substrate through the insulating layer and includes a third conductive layer pattern(175) and a second spacer(172).