METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

The method of manufacturing non-volatile semiconductor memory device comprises the steps of : forming a field oxide island(11) in matrix form to prevent punch-through; forming a buried bit line(13) by ion-injecting of impurity into the semiconductor substrate using a photoresist mask(12); forming an insulating film(14) on the top of the buried bit line(13); forming a gate insulating film(15) on the channel region of a cell; forming a floating gate line(16) on the gate insulating film(15) by patterning a conductive layer; forming an insulating film(17) covering the entire surface of the floating gate line(16); and forming a control gate line(20) perpendicular to the floating gate line(16) by patterning the conductive layer.