发明名称 GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a gallium nitride-based LED device capable of improving a thermal resistance characteristic and reliability by using, as an adhesive layer, a plurality of metallic layers each formed of a single element in joining an LED chip to a submount, and applying a soldering process to each of them. <P>SOLUTION: This gallium nitride-based LED device includes: the LED chip 100; and the submount 200 eutectic-bonded with the LED chip 100 through the adhesive layer 300, wherein the adhesive layer 300 is configured by soldering a plurality of metallic layers in which a first metallic layer 310 and a second metallic layer 320 are sequentially stacked, and the second metallic layer 320 is formed in a paste form. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009088521(A) 申请公布日期 2009.04.23
申请号 JP20080248815 申请日期 2008.09.26
申请人 SAMSUNG ELECTRO MECH CO LTD 发明人 KO KUN YOO;JEONG YOUNG JUNE;CHE SUNFAN;JOO SEONG AH;PARK JUNG KYU
分类号 H01L33/06;H01L33/32;H01L33/42;H01L33/62 主分类号 H01L33/06
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