| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a programming method of a nonvolatile memory device which reduces programming time while applying dummy program pulses. <P>SOLUTION: The programming method of the nonvolatile memory device includes steps of: performing program operation by applying a dummy program pulses having a pulse width wider than that of a program start pulse; performing a program operation by applying the program start pulses; and verifying whether the program is completed by the program operation. The programming method of the nonvolatile memory device further includes steps of: performing a program operation by applying stepwise dummy program pulses having a second pulse width and increasing the program pulses by a second step voltage; performing a program operation by applying program pulses having a first step voltage and a first pulse width; and verifying whether the program is completed by the program operation. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
