MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A polysilicon pattern material (unsuggested) is able to be deposited on a substrate, a second insulating layer, and a bit line structure through a chemical vapor deposition (CVD) or physical vapor deposition (PVD) process. According to an embodiment, a polysilicon pattern is able to be provided through a dry etching process using a mask pattern on the polysilicon pattern material as an etching mask. A foreign substance is able to be doped in the polysilicon pattern. The foreign substance is able to be phosphorus (P) or arsenic (As). According to an embodiment, the polysilicon pattern is able to include void and seam defects. According to the embodiment, a laser beam with a first wavelength is able to be emitted to the polysilicon pattern.