APPLYING SUBSTANTIALLY THE SAME VOLTAGE DIFFERENCES ACROSS MEMORY CELLS AT DIFFERENT LOCATIONS ALONG AN ACCESS LINE WHILE PROGRAMMING

摘要

An embodiment of a method of programing might include applying a first voltage difference across a first memory cell to be programed, where applying the first voltage difference comprises applying a first channel bias voltage to a channel of the first memory cell, and applying a second voltage difference, substantially equal to the first voltage difference, across a second memory cell to be programed while applying the first voltage difference across the first memory-cell, where applying the second voltage difference comprises applying a second channel bias voltage to a channel of the second memory cell. The first channel bias voltage is different than the second channel bias voltage, and the first memory cell and the second memory cell are commonly coupled to an access line and are at different locations along a length of the access line.

主权项

1. A method of programing, comprising:
applying a first voltage difference across a first memory cell to be programed during a particular programming operation, wherein applying the first voltage difference comprises applying a first channel bias voltage to a channel of the first memory cell; and applying a second voltage difference, substantially equal to the first voltage difference, across a second memory cell to be programed during the particular programming operation while applying the first voltage difference across the first memory cell, wherein applying the second voltage difference comprises applying a second channel bias voltage to a channel of the second memory cell; wherein the first channel bias voltage is different than the second channel bias voltage; and wherein the first memory cell and the second memory cell are commonly coupled to an access line and are at different locations along a length of the access line.