发明名称 MANUFACTURING METHOD OF RECOVERY INSTRUMENT, RECOVERY METHOD OF METAL IMPURITY, AND ANALYSIS METHOD OF METAL IMPURITY
摘要 PROBLEM TO BE SOLVED: To provide: a manufacturing method of a recovery instrument capable of accurately recovering and analyzing metal impurities present on the surface of a substrate; a recovery method of metal impurities; and an analysis method of metal impurities.SOLUTION: A recovery instrument 1 is formed of a fluorine resin, and has: a support tray 2 having a flat support surface 21; and a ring member 3 which is placed on the support tray 2 and acts as a recovery instrument. An inner surface of an opening 34 of the ring member 3 is subjected to surface melting processing at 340-380°C and surface polishing processing so that the surface roughness becomes 200 nm or less. When metal impurities are recovered, a semiconductor substrate W is mounted on the support tray 2, the ring member 3 is placed on the semiconductor substrate W, and the outer periphery of the semiconductor substrate W is sandwiched between the support tray 2 and the ring member 3. Then, a recovery liquid is injected into the opening 34, and the metal impurities present on the surface of the semiconductor substrate W are eluted in the recovery liquid. Then, the recovery liquid is taken out from the opening 34, and the metal impurities in the recovery liquid are measured by ICP-MS or the like.SELECTED DRAWING: Figure 1
申请公布号 JP2016119332(A) 申请公布日期 2016.06.30
申请号 JP20140256457 申请日期 2014.12.18
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 ARAKI KENJI
分类号 H01L21/66;G01N1/28 主分类号 H01L21/66
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