发明名称 |
Semiconductor device and method of fabricating same |
摘要 |
A lateral drain metal oxide semiconductor (LDMOS) device includes a well region having a second conductive type in a substrate, a body region having a first conductive type in the well region, a drift region having the second conductive type in the well region and spaced apart from the body region, a source region having the second conductive type in the body region, a drain region having the second conductive type in the drift region, a gate structure on the well region between the source region and the drain region, a shallow trench isolation (STI) structure in the drift region between the drain region and the source region, and a buried layer having the first conductive type in the well region under the drift region, a center of the buried layer being aligned with a center of the STI structure. |
申请公布号 |
US9466700(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201514955750 |
申请日期 |
2015.12.01 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Tsai Jiun-Yan;Tu Shuo-Lun;Lien Shih-Chin;Wu Shyi-Yuan |
分类号 |
H01L29/66;H01L21/265;H01L21/324 |
主分类号 |
H01L29/66 |
代理机构 |
Finnegan, Henderson, Farabow, Garrett & Dunner LLP |
代理人 |
Finnegan, Henderson, Farabow, Garrett & Dunner LLP |
主权项 |
1. A method of manufacturing a transistor, comprising:
forming a trench in a substrate; implanting a first dopant having a first conductive type into the substrate in a direction perpendicular to a major surface of the substrate by utilizing edges of the trench as an implantation mask, to form a buried layer under a bottom surface of the trench; implanting a second dopant having a second conductive type into the substrate at various implant angles with respect to the direction perpendicular to the major surface of the substrate, to form a drift implantation layer along side walls and the bottom surface of the trench; and depositing a dielectric material in the trench. |
地址 |
Hsinchu TW |