Fin shaped structure and method of forming the same

摘要

A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed on the substrate and surrounds the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer. Then, a buffer layer is formed on the fin structure. Following this, a threshold voltage implantation process is performed to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure.

主权项

1. A method of forming a fin shaped structure, comprising:
forming a fin structure on a substrate; forming an insulation layer on the substrate and surrounding the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer; forming a buffer layer on the fin structure; performing a threshold voltage implantation process to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure; and performing a well implantation process to form a second doped region in the fin structure after the threshold voltage implantation process, wherein the second doped region is formed both in the exposed portion and the bottom portion of the fin structure and the first doped region is formed on whole surfaces of the exposed portion of the fin structure.