3-dimensional nonvolatile memory device and method of manufacturing the same

摘要

The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another.

主权项

1. A method of manufacturing a nonvolatile memory device, comprising:
alternately forming first material layers and second material layers; etching the first material layers and the second material layers to form first trenches; etching the second material layers exposed in the first trenches; forming a charge trap layer along inner surfaces of the first trenches in which the second material layers are etched; forming a channel layer on the charge trap layer to form first channels having protrusions protruding between the stacked first material layers; etching the first material layers and the second material layers to form slits between adjacent first trenches; etching the charge trap layer exposed in the slits to isolate the charge trap layer of stacked memory cells from one another; and forming an insulating layer in the slits in which the charge trap layer is etched.