METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to improve a dielectric characteristic and a leakage current characteristic of an IPO layer by using a dielectric layer as a [ZrO2](1-x)[Al2O3]x layer. A substrate(10) including a floating gate(14) is provided. A dielectric layer(16) is formed on an upper surface of a floating gate by using a [ZrO2](1-x)[Al2O3]x(x is 0 or natural number) layer or a [ZrO2](1-x)[SiO2]x(x is 0 or natural number) layer. A control gate(18) is formed on an upper surface of the dielectric layer. The dielectric layer is formed by depositing a ZrO2 layer on the floating gate and depositing an Al2O3 layer on the wafer without the ZrO2 layer.