发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
申请公布号 US2016240566(A1) 申请公布日期 2016.08.18
申请号 US201615140837 申请日期 2016.04.28
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 KUBOTA Daisuke;HATSUMI Ryo;JINTYOU Masami;SHIGENOBU Takumi;GOTO Naoto
分类号 H01L27/12;H01L29/24;G02F1/133;G02F1/1333;G02F1/1339;G02F1/1341;G02F1/1362;G02F1/1368;G06F3/044;G06F3/041;G02F1/1335;H01L29/786;G02F1/1343 主分类号 H01L27/12
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP