| 发明名称 |
REMOVAL COMPOSITION FOR SELECTIVELY REMOVING HARD MASK AND METHODS THEREOF |
| 摘要 |
The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water. |
| 申请公布号 |
US2016312162(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201415028501 |
申请日期 |
2014.10.09 |
| 申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY ;EKC TECHNOLOGY INC |
发明人 |
Cui Hua |
| 分类号 |
C11D11/00;H01L21/311;H01L21/3213;C11D7/04;C23F1/38;C11D7/32;C23F1/18;C23F1/26;C23F1/34;H01L21/02;C11D7/26 |
主分类号 |
C11D11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate which comprises the low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon, the removal composition comprising:
(a) 0.1 wt % to 90 wt % of an oxidizing agent; (b) 0.0001 wt % to 50 wt % of a carboxylate; and (c) the balance up to 100 wt % of the removal composition comprising deionized water. |
| 地址 |
Wilmington DE US |
