| 发明名称 |
Thin Film Transistor, Method for Fabricating the Same, and Array Substrate |
| 摘要 |
Embodiments of the present invention provide a thin film transistor, a method for fabricating the same and an array substrate. The thin film transistor comprises a base substrate and an active region and a plurality of reflective plates formed on the base substrate, wherein the plurality of reflective plates are spaced apart from each other and provided at least at positions corresponding to the active region, the active region comprises polysilicon, and the polysilicon in the active region is formed by irradiating an amorphous silicon layer with laser emitted from a side of the amorphous silicon layer away from the reflective plates. |
| 申请公布号 |
US2016358952(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615099185 |
申请日期 |
2016.04.14 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
BU Qianqian |
| 分类号 |
H01L27/12;H01L29/66;H01L21/02;H01L29/786 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor, comprising a base substrate and an active region and a plurality of reflective plates formed on the base substrate, wherein
the plurality of reflective plates are spaced apart from each other and provided at least at positions corresponding to the active region, and the active region comprises polysilicon, and the polysilicon in the active region is formed by irradiating an amorphous silicon layer with laser emitted from a side of the amorphous silicon layer away from the reflective plates. |
| 地址 |
Beijing CN |
