发明名称 METAL MATERIAL, AND COATING FILM AND WIRING FOR SEMICONDUCTOR INTEGRATED CIRCUITRY UTILIZING THE METAL MATERIAL
摘要 When metallic material is employed for various metallic films, it is possible to improve at least one of the mechanical strength, the durability against abrasion, and the uniformess as a film while keeping unchanged the chemical property and the electric property of the metallic material. Due to the gel three-dimensional mesh structure 406, the dislocations 407 of the tangle in the mesh form are introduced in the crystal of the metal 401 at high density; therefore, when the tensile stress 403 is applied thereto, these dislocations slightly shift. As a result, the metal 401 deforms by uniformly dispersing distortion in the order of crystal grains, and hence there does not occur concentration of stress, which leads to the breakage or the severance at the grain interface 402. Therefore, the metallic material of the present invention improves the mechanical strength and the durability against abrasion.
申请公布号 US2009029126(A1) 申请公布日期 2009.01.29
申请号 US20060908840 申请日期 2006.02.07
申请人 NEC CORPORATION 发明人 TANIKAWA AKIO
分类号 B32B3/10 主分类号 B32B3/10
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