| 发明名称 |
NEURAL ELECTRODE FOR MEASURING NEURAL SIGNAL AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
Disclosed are a neural electrode for measuring a neural signal and a method for manufacturing the same. In the method, an indium tin oxide (ITO) electrode is formed on a substrate, an insulative passivation layer is formed on the substrate and the ITO electrode to expose a portion of the ITO electrode, and ITO nanorods are formed on the portion of the ITO electrode and the insulative passivation layer. Accordingly, it is possible to reduce electrical noise and improve a neurotrophic property by using the existing process. |
| 申请公布号 |
US2016270680(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201615065755 |
申请日期 |
2016.03.09 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM Yong Hee;JUNG Sang-Don;KIM Gook Hwa;KIM Ah Young |
| 分类号 |
A61B5/04;C23C14/28;C23C14/34;C23C14/08 |
主分类号 |
A61B5/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a neural electrode for measuring a neural signal, the method comprising:
forming an indium tin oxide (ITO) electrode on a substrate; forming an insulative passivation layer on the substrate and the ITO electrode to expose a portion of the ITO electrode; and forming ITO nanorods on the portion of the ITO electrode and the insulative passivation layer. |
| 地址 |
Daejeon KR |
