发明名称 |
Semiconductor memory device and operating method thereof |
摘要 |
A method of operating a semiconductor memory device includes performing a first program operation to simultaneously increase threshold voltages of memory cells having different target levels to sub-levels lower than the different target levels, verifying the memory cells by using different verify voltages, respectively, performing a second program operation to divide the threshold voltages of the memory cells, and performing a third program operation to increase the threshold voltages of the memory cells to the different target levels, respectively. |
申请公布号 |
US9478304(B2) |
申请公布日期 |
2016.10.25 |
申请号 |
US201514592672 |
申请日期 |
2015.01.08 |
申请人 |
SK Hynix Inc. |
发明人 |
Park Min Sang;Lee Yun Bong;Park Suk Kwang;Huh Hwang;Lee Dong Wook;Kim Myung Su;Cho Sung Hoon;Lee Sang Jo;Sunwoo Chang Jin;Choi Gil Bok |
分类号 |
G11C16/34;G11C16/10;G11C16/26;G11C16/04;G11C11/56 |
主分类号 |
G11C16/34 |
代理机构 |
I P & T Group LLP |
代理人 |
I P & T Group LLP |
主权项 |
1. A method of operating a semiconductor memory device, the method comprising:
performing a first program operation to simultaneously increase threshold voltages of memory cells having different target program levels to sub-levels lower than the different target program levels, by applying a first program pulse once to a selected word line coupled to the memory cells to be programmed, without a verify operation; verifying the memory cells by using different verify voltages, respectively; performing a second program operation to divide the threshold voltages of the memory cells; and performing a third program operation to increase the threshold voltages of the memory cells to the different target program levels, respectively. |
地址 |
Gyeonggi-do KR |