发明名称 Non-volatile memory device and related method of operation
摘要 A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.
申请公布号 US9478295(B2) 申请公布日期 2016.10.25
申请号 US201615089775 申请日期 2016.04.04
申请人 Samsung Electronics Co., Ltd. 发明人 Choi Myung-Hoon;Im Jae-Woo;Park Ki-Tae
分类号 G11C16/04;G11C16/14;G11C16/34;G11C16/26 主分类号 G11C16/04
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A method of operating a non-volatile memory device including memory cells formed in a direction perpendicular to a substrate, comprising: receiving a start command through a command line; receiving an address through an address line; receiving at least one setting value through the address line; receiving a confirm command corresponding to the start command through the command line; setting at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command; and executing an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.
地址 Suwon-si, Gyeonggi-do KR