发明名称 |
Non-volatile memory device and related method of operation |
摘要 |
A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter. |
申请公布号 |
US9478295(B2) |
申请公布日期 |
2016.10.25 |
申请号 |
US201615089775 |
申请日期 |
2016.04.04 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Choi Myung-Hoon;Im Jae-Woo;Park Ki-Tae |
分类号 |
G11C16/04;G11C16/14;G11C16/34;G11C16/26 |
主分类号 |
G11C16/04 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method of operating a non-volatile memory device including memory cells formed in a direction perpendicular to a substrate, comprising:
receiving a start command through a command line; receiving an address through an address line; receiving at least one setting value through the address line; receiving a confirm command corresponding to the start command through the command line; setting at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command; and executing an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter. |
地址 |
Suwon-si, Gyeonggi-do KR |