| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a pore having arc-shaped, L-shaped or spiral-shaped cross-section in depth direction of a crystal substrate with high aspect ratio and at low cost in a simple process.SOLUTION: Disclosed is a method for forming pores in a crystal substrate 1 whose main component is composed of silicon. On the surface of the crystal substrate 1, metal films 2, 3 are arranged which are formed by making a plurality of kinds of metals adjacent to each other and bringing them into close contact with the crystal substrate, and metal films arranged on the surface thereof are chemically etched. Moreover, a functional device is formed by utilizing the pores. |
