发明名称 On-chip molecule fluorescence detection
摘要 A semiconductor device used for fluorescent-based molecule detection and a method for manufacturing the same are provided. The semiconductor device has a fluid channel layer defining a fluid channel through which a sample stream flows. A target cell coupled with a fluorescent source is contained by the sample stream. The semiconductor device also has an excitation light source for generating excitation light that reaches the target cell coupled with the fluorescent source to generate fluorescent light. The semiconductor device also has a light filter layer for permitting the fluorescent light to pass through and to block the excitation light and a light detection layer for detecting the fluorescent light. The functional components of the device are highly integrated. Leakage of the excitation light and background noise into the light detection component can be minimized to improve the quality of detection.
申请公布号 US9513220(B1) 申请公布日期 2016.12.06
申请号 US201514982740 申请日期 2015.12.29
申请人 International Business Machines Corporation 发明人 Astier Yann;Bedell Stephen W.;Li Ning;Sadana Devendra K.;Spratt William T.;Wang Chao
分类号 G01N21/64;H01L31/0216;H01L31/0232 主分类号 G01N21/64
代理机构 Scully, Scott, Murphy & Presser, P.C. 代理人 Scully, Scott, Murphy & Presser, P.C. ;Percello, Esq. Louis J.
主权项 1. A semiconductor device comprising: a fluid channel layer defining a fluid channel, wherein the fluid channel has an inlet for admitting a sample stream and an outlet for discharging the sample stream, wherein the sample stream comprises at least one target cell coupled with a fluorescent source; an excitation light source for generating excitation light, wherein the excitation light reaches the target cell coupled with the fluorescent source to generate fluorescent light; a light filter layer configured to permit the fluorescent light to pass through and to block the excitation light; and a light detection layer coupled to the light filter layer and configured to detect the fluorescent light; wherein the light detection layer is located on a too surface of a Si substrate.
地址 Armonk NY US