| 摘要 |
<p>A photocathode comprising a laminate (10) composed of a UV glass substrate (3) and, successively formed thereof, an SiO2 layer (15), a GaAlN layer (17a), a III - V nitride semiconductor layer (18) and a Cs-O layer (19). The UV glass substrate (3) that absorbs infrared rays can be heat-treated at a high speed by heating with light and can transmit ultraviolet rays, making it possible to introduce ultraviolet rays into the III - V nitride semiconductor layer (18) that effects the photo-electric conversion.</p> |
