| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that can be enlarged in film thickness by forming a p-type layer capable of obtaining a high degree of hole mobility and is capable of solving problems such as the generation of a short circuit even when the area of the element is increased. <P>SOLUTION: The semiconductor light emitting element is provided with an anode (12), a cathode (20) formed oppositely to the anode (12), an active layer (16) formed between the anode (12) and the cathode (20), and a p-type layer (14) formed between the anode (12) and the active layer (16). The semiconductor light emitting element is characterised in that the p-type layer (14) includes 1st dots (100) each of which has a core (100A) consisting of any one of silicon (Si), germanium (Ge) and silicon-germanium compound or a mixture of these elements and a shell (100B) surrounding the core (100A) and consisting of a material having low hole barrier. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
