发明名称 Metal-insulator-metal-structured capacitor formed with polysilicon
摘要 A METAL-INSULATOR-METAL structured capacitor is formed with polysilicon instead of an oxide film as a sacrificial layer material that defines a storage electrode region. A MPS (Meta-stable Poly Silicon) process is performed to increase the surface area of the sacrificial layer that defines the storage electrode region and also increase the area of the storage electrode formed over sacrificial layer. This process results in increasing the capacity of the capacitor in a stable manner.
申请公布号 US2007284641(A1) 申请公布日期 2007.12.13
申请号 US20060595985 申请日期 2006.11.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SEO WON SUN
分类号 H01L29/94;H01L21/20;H01L29/00 主分类号 H01L29/94
代理机构 代理人
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