SOLID-STATE IMAGE PICKUP DEVICE

摘要

In a CMOS image sensor, a plurality of bias circuits are dispersedly arranged in an arrangement region of column circuits corresponding to each column of a pixel array. Each bias circuit generates a bias voltage on the basis of a reference current which has been input and supplies the generated bias voltage to the corresponding column circuit 10 which is arranged in the vicinity. Thereby, luminance unevenness of a picked-up image caused by an IR drop of a ground wire for the column circuits is reduced.

主权项

1. A solid-state image pickup device, comprising:
a pixel array that a plurality of pixels each of which is adapted to convert an optical signal to an electric signal are arranged in a matrix; a plurality of vertical signal lines provided respectively corresponding to columns of the pixel array; a plurality of column circuits which are respectively coupled to the vertical signal lines and each of which fetches the electric signal which has been output from each pixel in the corresponding column, the column circuits being divided into a plurality of groups; and a plurality of bias circuits respectively corresponding to the groups of the column circuits, wherein each of the bias circuits receives a reference current, generates one bias voltage or a plurality of bias voltages on the basis of the reference voltage and supplies the generated one bias voltage or bias voltages to each of the column circuits belonging to the corresponding group, and wherein each of the bias circuits is provided adjacent to any of the column circuits belonging to the corresponding group.