发明名称 |
Power supply independent temperature sensor |
摘要 |
A temperature sensor is fabricated in an integrated circuit in combination with another device such as a microprocessor using a fabrication technology that is suitable for fabricating the device. Operation of the temperature sensor is based on the bandgap physics of semiconductors using a bandgap reference circuit and an amplifier that generate two measurement voltages, a voltage that is temperature-dependent and a voltage that is temperature-independent. The temperature sensor includes a bandgap power supply circuit that supplies a power supply voltage that is very stable to drive the temperature sensor so that the temperature sensor generates an output signal that is essentially independent of the power supply voltage.
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申请公布号 |
US6157244(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19980170335 |
申请日期 |
1998.10.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LEE, THOMAS H.;JOHNSON, MARK G.;HOLST, JOHN C. |
分类号 |
G01K7/01;(IPC1-7):G05F1/10 |
主分类号 |
G01K7/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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