发明名称 Power supply independent temperature sensor
摘要 A temperature sensor is fabricated in an integrated circuit in combination with another device such as a microprocessor using a fabrication technology that is suitable for fabricating the device. Operation of the temperature sensor is based on the bandgap physics of semiconductors using a bandgap reference circuit and an amplifier that generate two measurement voltages, a voltage that is temperature-dependent and a voltage that is temperature-independent. The temperature sensor includes a bandgap power supply circuit that supplies a power supply voltage that is very stable to drive the temperature sensor so that the temperature sensor generates an output signal that is essentially independent of the power supply voltage.
申请公布号 US6157244(A) 申请公布日期 2000.12.05
申请号 US19980170335 申请日期 1998.10.13
申请人 ADVANCED MICRO DEVICES, INC. 发明人 LEE, THOMAS H.;JOHNSON, MARK G.;HOLST, JOHN C.
分类号 G01K7/01;(IPC1-7):G05F1/10 主分类号 G01K7/01
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