发明名称 |
Method for measuring silicide proportion, method for measuring annealing temperature, method for fabricating semiconductor device and x-ray photo receiver |
摘要 |
A measurement substrate 100 in which a silicon oxide film 102, a polysilicon layer 103 and a titanium silicide layer 104 are formed over a silicon substrate 101 in this order is prepared. The measurement substrate 100 is irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layer 104 are measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide film 102 and the intensity of hard X-rays emitted from titanium in the titanium silicide layer 104.
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申请公布号 |
US2004137650(A1) |
申请公布日期 |
2004.07.15 |
申请号 |
US20040751893 |
申请日期 |
2004.01.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TSUZUMITANI AKIHIKO;OKUNO YASUTOSHI |
分类号 |
G01N23/223;G01N23/22;H01L21/28;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01N23/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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